By C.K Maiti, G.A Armstrong

ISBN-10: 0585488290

ISBN-13: 9780585488295

ISBN-10: 0750307234

ISBN-13: 9780750307239

The main major characteristic of this paintings is that it combines 3 specified themes - know-how, gadget layout and simulation, and purposes - in a entire means.


This booklet is meant to be used via senior undergraduate or first-year graduate scholars in utilized Physics, digital and electric Engineering, and fabrics Sciences, and as a reference for engineers and scientists fascinated by semiconductor machine examine and improvement for RF purposes.

Show description

Read Online or Download Applications of silicon-germanium heterostructure devices PDF

Similar electrical & electronic engineering books

Download e-book for kindle: The MathML Handbook by Pavi Sandhu

This advisor presents an outline of MathML and its functional functions, explains simple recommendations corresponding to XML syntax, presentation markup, content material markup and mixed markup, and discusses using different server facet purposes

Download PDF by George Tsoulos: MIMO Antenna Technology for Wireless Communications

This publication assembles assurance on all features of MIMO know-how in addition to up to date info on key similar matters. members from top educational and business associations around the globe proportion their services and lend the e-book an international viewpoint. They lead readers steadily from uncomplicated to extra complicated techniques, from propagation modeling and function research to space-time codes, quite a few platforms, implementation suggestions and obstacles, functional method improvement concerns, box trials, and community making plans concerns.

Download e-book for iPad: Probability, random variables, and random signal principles by Peyton Peebles

This concise creation to likelihood concept incorporates at the luck of prior variations, supplying readers a logical, well-organized examine the elemental of the subject--includes purposes that improve engineers' clutch of chance techniques. New! insurance of discrete-time random methods and sequences, and different basic issues concerning electronic sign processing.

New PDF release: Analog Signal Processing

Analog sign Processing brings jointly in a single position vital contributions and state of the art examine leads to this speedily advancing sector. Analog sign Processing serves as a great reference, delivering perception into probably the most very important concerns within the box.

Extra resources for Applications of silicon-germanium heterostructure devices

Sample text

35 1037–44 [38] Roulston D J and McGregor J M 1992 Effect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors Solid-State Electron. 35 1019–20 [39] Gao G-B and Morkoc H 1991 Base transit time for SiGe-base heterojunction bipolar transistors Electron. Lett. 27 1408–10 [40] Won T and Morkoc H 1989 High speed performance of Si/Si1−x Gex heterojunction bipolar transistors IEEE Electron Device Lett. 10 33–5 [41] Hueting R J E, Slotboom J W, Pruijmboom A, de Boer W B, Timmering E C and Cowern N E B 1996 On the optimization of SiGe-base bipolar transistors IEEE Trans.

List of devices available in the SiGe BiCMOS technology. The main characteristics are provided for each device which are available to the designers to make a full custom design. 5 fF µm−2 6 Ω for a 2 × 10 µm 2000 V HBM Summary 25 An excellent review of the application-driven origins of SiGe technology, how it has evolved and how the limitations of conventional silicon bipolar scaling have enhanced its adoption in the semiconductor industry, has been written by Meyerson [95]. This review demonstrates that SiGe HBTs are superior to Si BJTs and comparable to the best GaAs transistors and ideally suited for low-voltage and low-power wireless communication applications.

35 549–50 Yablonovitch E and Gmitter T 1985 A study of n+ SIPOS:p-Si heterojunction emitters IEEE Electron Device Lett. 6 597–9 Kwark Y H and Swanson R M 1987 N-type SIPOS and polysilicon emitters Solid-State Electron. 30 1121–5 Takahashi M, Tabe M and Sakakibara Y 1987 IV characteristics of oxygendoped Si epitaxial film (OXSEF)/Si heterojunctions IEEE Electron Device Lett. 8 475–6 Sugii T, Ito T, Furumura Y, Doki M, Mieno F and Maeda M 1988 β-SiC/Si heterojunction bipolar transistors with high current gain IEEE Electron Device Lett.

Download PDF sample

Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong

by Charles

Rated 4.19 of 5 – based on 23 votes