By C.K Maiti, G.A Armstrong
The main major characteristic of this paintings is that it combines 3 specified themes - know-how, gadget layout and simulation, and purposes - in a entire means.
This booklet is meant to be used via senior undergraduate or first-year graduate scholars in utilized Physics, digital and electric Engineering, and fabrics Sciences, and as a reference for engineers and scientists fascinated by semiconductor machine examine and improvement for RF purposes.
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Extra resources for Applications of silicon-germanium heterostructure devices
35 1037–44  Roulston D J and McGregor J M 1992 Eﬀect of bandgap gradient in the base region of SiGe heterojunction bipolar transistors Solid-State Electron. 35 1019–20  Gao G-B and Morkoc H 1991 Base transit time for SiGe-base heterojunction bipolar transistors Electron. Lett. 27 1408–10  Won T and Morkoc H 1989 High speed performance of Si/Si1−x Gex heterojunction bipolar transistors IEEE Electron Device Lett. 10 33–5  Hueting R J E, Slotboom J W, Pruijmboom A, de Boer W B, Timmering E C and Cowern N E B 1996 On the optimization of SiGe-base bipolar transistors IEEE Trans.
List of devices available in the SiGe BiCMOS technology. The main characteristics are provided for each device which are available to the designers to make a full custom design. 5 fF µm−2 6 Ω for a 2 × 10 µm 2000 V HBM Summary 25 An excellent review of the application-driven origins of SiGe technology, how it has evolved and how the limitations of conventional silicon bipolar scaling have enhanced its adoption in the semiconductor industry, has been written by Meyerson . This review demonstrates that SiGe HBTs are superior to Si BJTs and comparable to the best GaAs transistors and ideally suited for low-voltage and low-power wireless communication applications.
35 549–50 Yablonovitch E and Gmitter T 1985 A study of n+ SIPOS:p-Si heterojunction emitters IEEE Electron Device Lett. 6 597–9 Kwark Y H and Swanson R M 1987 N-type SIPOS and polysilicon emitters Solid-State Electron. 30 1121–5 Takahashi M, Tabe M and Sakakibara Y 1987 IV characteristics of oxygendoped Si epitaxial ﬁlm (OXSEF)/Si heterojunctions IEEE Electron Device Lett. 8 475–6 Sugii T, Ito T, Furumura Y, Doki M, Mieno F and Maeda M 1988 β-SiC/Si heterojunction bipolar transistors with high current gain IEEE Electron Device Lett.
Applications of silicon-germanium heterostructure devices by C.K Maiti, G.A Armstrong